In this paper, we present second generation current-controlled conveyor (CCCII)-based simple memristor circuit which exhibits a hard-switching voltage-current relationship. The proposed memristor circuit contains only single CCCII and single grounded capacitor that are attractive for the integrated circuit designers. The proposed memristor emulator has four main advantages: hard-switching behavior, not utilizing multiplier circuit, biasing current or voltage source (excluding DC current or voltage source), and being free of body effect for all transistors. Cadence Spectre Analog Environment with TSMC 0.18μm process parameters is used for all simulations. The memristive chip occupies only 81.85μm×87.76μm area. All simulation results are presented to demonstrate the performance of the proposed circuit by changing some parameters such as frequency, temperature, DC power supply voltages and process variations. Also, the robust performance of the proposed memristor is confirmed via Monte Carlo simulations. The simulation results for designed memristor are in accordance with theoretical memristive behavior.

中文翻译：

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仅采用一个CCCII和一个电容的具有硬开关行为的忆阻器设计

在本文中，我们提出了基于第二代电流控制传送器 (CCCII) 的简单忆阻器电路，该电路表现出硬开关电压-电流关系。所提出的忆阻器电路仅包含对集成电路设计人员有吸引力的单个 CCCII 和单个接地电容器。所提出的忆阻器仿真器具有四个主要优点：硬开关行为、不使用乘法器电路、偏置电流或电压源（不包括直流电流或电压源），以及所有晶体管都没有体效应。使用 TSMC 0.18 的 Cadence Spectre 模拟环境μm 过程参数用于所有模拟。忆阻芯片仅占81.85μ米×87.76μ米面积。所有仿真结果都通过改变频率、温度、直流电源电压和工艺变化等参数来展示所提出电路的性能。此外，所提出的忆阻器的稳健性能通过蒙特卡罗模拟得到证实。所设计忆阻器的仿真结果与理论忆阻行为一致。