Abstract

Oxygen plasma processis usually implemented for selective etching of organic films. The oxygen plasma etches the organic materials non-uniformly, the deep etching generatesthe rough surface morphology. However, high-pressure plasma environment can maintain the initial surface status independent of etching depth. Here, a high-pressureplasma etching method that can reduce the surface roughness of ferroelectric polymer film is presented. After an amorphous polymer having the same etching rate is formed, the surface of the amorphous polymer film is treated with a plasma, which makes it possible to have a smoother surface than the original film. This process is expected to be useful for the surface treatment of all crystalline polymers, including ferroelectric polymers.

摘要

氧等离子体工艺通常用于选择性蚀刻有机膜。氧等离子体不均匀地腐蚀有机材料，深腐蚀产生粗糙的表面形态。然而，高压等离子体环境可以保持独立于蚀刻深度的初始表面状态。在此，提出了可以降低铁电聚合物膜的表面粗糙度的高压等离子体蚀刻方法。在形成具有相同蚀刻速率的非晶聚合物之后，用等离子体处理非晶聚合物膜的表面，这使得可以具有比原始膜更光滑的表面。预期该方法可用于所有结晶聚合物，包括铁电聚合物的表面处理。