Antimony selenide (Sb₂Se₃) has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic material. However, the intrinsic low carrier density and electrical conductivity limited its scope of applications. In this work, an effective ion doping strategy was implemented to improve the electrical and photoelectrical performances of Sb₂Se₃ thin films. The Sn-doped and I-doped Sb₂Se₃ thin films with controllable chemical composition can be prepared by magnetron sputtering combined with post-selenization treatment based on homemade plasma sintered targets. As a result, the Sn-doped Sb₂Se₃ thin film exhibited a great increase in carrier density by several orders of magnitude, by contrast, a less increase with one order of magnitude was achieved for the I-doped Sb₂Se₃ thin film. Additionally, such cation or anion doping could simultaneously modify the conduction type of Sb₂Se₃, enabling the first fabrication of a substrate structured Sb₂Se₃-based quasi-homojunction thin film solar cell with configuration of Mo/Sb₂Se₃-Sn/Sb₂Se₃-I/ITO/Ag. The obtained power conversion efficiency exceeding 2% undoubtedly demonstrated its attractive photovoltaic application potential and further investigation necessity.

近年来，硒化锑（Sb ₂ Se ₃）作为一种环保且具有成本效益的光伏材料引起了极大的研究关注。然而，固有的低载流子密度和导电性限制了其应用范围。在这项工作中，实施了一种有效的离子掺杂策略来提高 Sb ₂ Se ₃薄膜的电学和光电性能。基于自制等离子体烧结靶材，采用磁控溅射结合后硒化处理可制备化学成分可控的Sn掺杂和I掺杂Sb ₂ Se ₃薄膜。结果，Sn 掺杂的 Sb ₂ Se ₃薄膜显示载流子密度大大增加了几个数量级，相比之下，I 掺杂的 Sb ₂ Se ₃薄膜实现了一个数量级的较少增加。此外，这种阳离子或阴离子掺杂可以同时改变 Sb ₂ Se ₃的导电类型，从而能够首次制造出具有Mo/Sb ₂ Se ₃ -结构的衬底结构的 Sb ₂ Se ₃基准同质结薄膜太阳能电池。 Sn/Sb ₂ Se ₃-I/ITO/Ag。获得的超过 2% 的功率转换效率无疑证明了其诱人的光伏应用潜力和进一步研究的必要性。