We report an investigation of the spin-to-charge current conversion in sputter-deposited films of the topological insulator ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ onto single crystalline layers of yttrium iron garnet (YIG-${\mathrm{Y}}_3{\mathrm{Fe}}_5{\mathrm{O}}_{12}$) and polycrystalline films of permalloy ($\mathrm{Py}\text{−}{\mathrm{Ni}}_{81}{\mathrm{Fe}}_{19}$). Pure spin current was injected into the ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ layer by means of the spin pumping process produced by the spin precession in microwave driven ferromagnetic resonance of the ferromagnetic film. The spin-to-charge current conversion occurring at the ${\mathrm{Bi}}_2{\mathrm{Se}}_3$/ferromagnet interface is attributed to the inverse Rashba-Edelstein effect (IREE). From the data, we verified that the voltage generated by the spin-to-charge current conversion process in ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ has the same polarity as the inverse spin Hall effect in Ta, which is opposite to the one in Pt. Also, from the dependence of the voltage on the ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ thickness we were able the to calculate the IREE length values and found that $1.2\mathrm{pm}\le |{\lambda }_{\mathrm{IREE}}|\le 2.2\mathrm{pm}$. This result allows us to conclude that indeed the surface states of ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ have a dominant role in the spin-to-charge current conversion process, and the mechanism based on the spin diffusion process plays a secondary role.

中文翻译：

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通过自旋泵实验揭示拓扑绝缘体Bi2Se3中的自旋至充电电流转换信号

我们报告了对拓扑绝缘体溅射沉积膜中自旋至电荷电流转换的研究 ${双}_2{硒}_3$ 到钇铁石榴石（YIG-${\mathrm{ÿ}}_3{铁}_5{\mathrm{Ø}}_{12}$）和坡莫合金（$y\text{-}{你}_{81}{铁}_{19}$）。纯自旋电流注入到${双}_2{硒}_3$借助于自旋进动在微波驱动的铁磁膜的铁磁共振中产生的自旋泵浦过程形成层。自旋至充电电流的转换发生在${双}_2{硒}_3$/ ferronetnet接口归因于Rashba-Edelstein逆效应（IREE）。根据数据，我们验证了自旋至充电电流转换过程中产生的电压${双}_2{硒}_3$与Ta中的逆自旋霍尔效应具有相同的极性，与Pt中的逆相反。同样，从电压对${双}_2{硒}_3$ 厚度，我们能够计算IREE长度值，发现 $1.2\mathrm{下午}\le |{\lambda }_{\mathrm{IREE}}|\le 2.2\mathrm{下午}$。这个结果使我们可以得出结论，确实${双}_2{硒}_3$ 在自旋至充电电流转换过程中起主导作用，而基于自旋扩散过程的机理起次要作用。