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Effects of Preparation Methods for Cu Foil on the Electric‐Explosion Properties
Propellants, Explosives, Pyrotechnics ( IF 1.7 ) Pub Date : 2021-02-22 , DOI: 10.1002/prep.202000156 Qin Ye 1 , Airong Li 1 , Qiubo Fu 2 , Shuang Yang 2 , Fan Lei 2
Propellants, Explosives, Pyrotechnics ( IF 1.7 ) Pub Date : 2021-02-22 , DOI: 10.1002/prep.202000156 Qin Ye 1 , Airong Li 1 , Qiubo Fu 2 , Shuang Yang 2 , Fan Lei 2
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In order to study the different structural characteristics and electric explosion properties of Cu foils prepared by different methods, Cu films were prepared by electron beam evaporation, electroplating, evaporation, and magnetron sputtering in this work. The morphology and structure of the Cu films were characterized by SEM, AFM, XRD. Furtherly, the Cu films were separately etched into a bridge foil shape to measure the explosion process of the Cu foil in the discharge circuit at the charging voltage of 3000 V, and the resistance and deposition energy were calculated. The results showed that the particle size and surface roughness of Cu foil prepared by evaporation was smallest, and the crystallization peak of Cu (111) texture was strongest. The surface roughness of the Cu foil prepared by magnetron sputtering was the largest, and the peak voltage was the highest of 1640 V. The Cu foil prepared by electroplating had the smallest initial resistance and the longest time to reach the peak resistance during the explosion process. The deposition energy of the Cu film is 93.37 mJ, which is the largest. Among these methods, the Cu foil prepared by electroplating is more conducive to energy conversion.
中文翻译：
铜箔的制备方法对电爆炸性能的影响
为了研究用不同方法制备的铜箔的不同结构特性和电爆炸性能，本工作通过电子束蒸发，电镀，蒸发和磁控溅射制备了铜膜。用SEM，AFM，XRD对Cu膜的形貌和结构进行了表征。此外，将Cu膜分别蚀刻成桥箔形状，以在3000V的充电电压下测量放电电路中的Cu箔的爆炸过程，并计算电阻和沉积能量。结果表明，蒸发制备的Cu箔的粒度和表面粗糙度最小，Cu（111）织构的结晶峰最强。通过磁控溅射制备的铜箔的表面粗糙度最大，峰值电压最高为1640V。通过电镀制备的铜箔在爆炸过程中具有最小的初始电阻和最长的到达峰值电阻的时间。Cu膜的沉积能量最大，为93.37mJ。在这些方法中，通过电镀制备的Cu箔更有利于能量转换。
更新日期：2021-03-31
中文翻译：
铜箔的制备方法对电爆炸性能的影响
为了研究用不同方法制备的铜箔的不同结构特性和电爆炸性能，本工作通过电子束蒸发，电镀，蒸发和磁控溅射制备了铜膜。用SEM，AFM，XRD对Cu膜的形貌和结构进行了表征。此外，将Cu膜分别蚀刻成桥箔形状，以在3000V的充电电压下测量放电电路中的Cu箔的爆炸过程，并计算电阻和沉积能量。结果表明，蒸发制备的Cu箔的粒度和表面粗糙度最小，Cu（111）织构的结晶峰最强。通过磁控溅射制备的铜箔的表面粗糙度最大，峰值电压最高为1640V。通过电镀制备的铜箔在爆炸过程中具有最小的初始电阻和最长的到达峰值电阻的时间。Cu膜的沉积能量最大，为93.37mJ。在这些方法中，通过电镀制备的Cu箔更有利于能量转换。
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