In this modern era, energy devices have become an important part of our daily life. Various types of energy conversion devices have been developed to meet the current energy demands. Semiconductor anode (CdZnO) has been synthesized by the sol‐gel method and lattice constants and the band gap results have been compared experimentally and theoretically. XRD results show that Cd‐doped ZnO shifts the peaks toward the lower angles, increases the lattice parameters, and decreases the crystallite size (48 nm). Microstructure of Cd‐doped ZnO shows the agglomerations of particles, found in the shape of cubes, hexagons, and dumbbell shapes with diameter in the range of 2–7 µm. The experimentally obtained conductivity of CdZnO is 0.142 S/cm at 550°C. The electrochemical impedance spectroscopy shows the decreased resistance with an increase in temperature. The doped system shows a maximum open circuit voltage of 0.95 V and performance of 0.52 W/cm² at 550°C.

中文翻译：

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用于能量转换装置的掺杂镉的氧化锌的电学和光学性质的研究

在这个现代时代，能源设备已成为我们日常生活的重要组成部分。已经开发出各种类型的能量转换装置来满足当前的能量需求。通过溶胶-凝胶法合成了半导体阳极（CdZnO），并获得了晶格常数，并对带隙结果进行了实验和理论比较。XRD结果表明，掺Cd的ZnO将峰移向较低的角度，增加了晶格参数，并减小了微晶尺寸（48 nm）。掺Cd的ZnO的微观结构显示出颗粒的团聚，呈立方体，六边形和哑铃形，直径在2–7 µm范围内。在550°C下，实验获得的CdZnO的电导率为0.142 S / cm。电化学阻抗谱显示随着温度升高电阻降低。²在550°C下。