Vertical Heterostructures: Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS2(1‐x)Se2x/SnS2(1‐y)Se2y Heterostructures (Adv. Mater. 8/2021),Advanced Materials

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Vertical Heterostructures: Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS2(1‐x)Se2x/SnS2(1‐y)Se2y Heterostructures (Adv. Mater. 8/2021)
Advanced Materials ( IF 27.4 ) Pub Date : 2021-02-22 , DOI: 10.1002/adma.202170059
Xiaoting Wang _{1,

2} , Longfei Pan _{1,

2} , Juehan Yang ₁ , Bo Li ₃ , Yue‐Yang Liu ₁ , Zhongming Wei _{1,

2}

Affiliation

In article number 2006908, Zhongming Wei and co‐workers show how the nearly intrinsic van der Waals interface of MoS_2(1−x)Se_2x/SnS_2(1−y)Se_2y enables the identification of the intrinsic behaviors of heterostructures, such as type‐II band alignment with large band offset, effective charge transfer, and enhanced transport properties.

中文翻译：

垂直异质结构：合金-合金2D II型MoS2（1-x）Se2x / SnS2（1-y）Se2y异质结构的直接合成和增强整流（Adv。Mater。8/2021）

魏中明及其同事在文章2006908中展示了MoS _{2（1- x）} Se _{2 x} / SnS _{2（1- y）} Se _{2 y}的近乎内在的范德瓦尔斯界面如何识别分子的内在行为。异质结构，例如具有大带偏移的II型能带对准，有效的电荷转移和增强的传输性能。

更新日期：2021-02-22

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