In this paper we focus on investigation of GaP volume fraction in GaP nanowires (NWs) prepared on GaP substrates by MOVPE using VLS mode. For this purpose, spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM) image processing methods were used showing a good agreement. In ellipsometry, composition of GaP and void was modeled using linear gradient model in combination with Bruggeman Effective Medium Approximation (BEMA). From this model the volume fraction of GaP on the top of the nanowires was determined from 1.5%–6.3%) and in the bottom of the nanowires from 34.8%–39.6%), respectively. The histogram of GaP nanowires SEM image was divided into 10 bins above the plane. The volume fraction of GaP nanowires determined from these bins ranged from 1.4 % to 3.8 % on the top of the nanowires and from 33.5%–46.2% in their bottom. Linearity of the SEM histogram bins gradient was further compared to the linearity of the linear gradient layer model.

在本文中，我们重点研究通过MOVPE使用VLS模式在GaP衬底上制备的GaP纳米线（NWs）中的GaP体积分数。为此，使用了椭圆偏振光谱法（SE）和扫描电子显微镜（SEM）图像处理方法，显示出良好的一致性。在椭偏仪中，GaP和空隙的组成是使用线性梯度模型与Bruggeman有效介质近似（BEMA）组合建模的。根据该模型，分别确定了纳米线顶部的GaP的体积分数为1.5％–6.3％）和纳米线底部的GaP的体积分数为34.8％–39.6％）。GaP纳米线SEM图像的直方图在平面上方分为10个bin。从这些分格确定的GaP纳米线的体积分数在纳米线的顶部介于1.4％至3.8％之间，而在其底部则介于33.5％–46.2％之间。