A series of single phase, warm white light emitting phosphors, Gd(P_xV_1–x)O₄:y at% Sm³⁺, with 1 at% Bi³⁺ doping concentration were synthesized by high temperature solid state method in this work. The experimental results indicate broadband cyan emission of Bi³⁺ and characteristic orange-red emission of Sm³⁺ can be effectively tuned by changing the ratios of PO₄³⁻/VO₄³⁻ in Gd(P_xV_1–x)O₄:1 at% Sm³⁺,1 at% Bi³⁺, and the energy transfer process among VO₄³⁻, Sm³⁺, Bi³⁺ also can be adjusted. Based on this, warm white light emitting can be realized by further optimizing the doping concentration of Sm³⁺ in the phosphors. At 423 K, the PL intensity of Gd(P_0.7V_0.3)O₄:2 at% Sm³⁺,1 at% Bi³⁺ remains ～84.3% of the initial value at 293 K, while the measured quantum efficiency is 67.8%. EL spectrum analysis results of the fabricated white light emitting diode (wLED) based on a 310 nm UV-chip and Gd(P_0.7V_0.3)O₄:2 at% Sm³⁺,1 at% Bi³⁺ phosphors imply low correlated color temperature (3132 K) and appropriate color-rending index (R_a = 82.7). These results demonstrate that Gd(P_0.7V_0.3)O₄:2 at% Sm³⁺,1 at% Bi³⁺ is a good candidate for manufacturing UV-activated warm white light emitting diodes.

本研究采用高温固相法合成了一系列单相暖白光荧光粉Gd(P _x V _{1– x} )O ₄ : y at% Sm ³⁺，掺杂浓度为1 at% Bi ³⁺ 。工作。实验结果表明，通过改变Gd(P _x V _{1– x} )O中 PO ₄ ^3- /VO ₄ ^3-的比例，可以有效地调节Bi ^{3+的宽带青色发射和 Sm 3+}的特征橙红色发射。₄ :1 at% Sm ³⁺ ,1 at% Bi ³⁺_{，并且VO 4} ^3-、Sm ³⁺、Bi ³⁺之间的能量传递过程也可以调节。在此基础上，进一步优化荧光粉中Sm ³⁺的掺杂浓度，可以实现暖白光发射。在423 K时，Gd(P _0.7 V _0.3 )O ₄ :2 at% Sm ³⁺ ,1 at% Bi ³⁺的PL强度保持在293 K时初始值的～84.3%，而实测量子效率为67.8 %。基于 310 nm UV 芯片和 Gd(P _0.7 V _0.3 )O ₄ :2 at% Sm ^{3+制作的白光发光二极管 (wLED) 的 EL 光谱分析结果},1 at% Bi ³⁺荧光粉意味着低相关色温 (3132 K) 和适当的显色指数 ( _Ra =  82.7)。这些结果表明，Gd(P _0.7 V _0.3 )O ₄ :2 at% Sm ³⁺ ,1 at% Bi ³⁺是制造紫外激活暖白光发光二极管的良好候选者。