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Realization of warm white light emitting in single phase Gd(PxV1−x)O4:y at% Sm3+,1 at% Bi3+ phosphor
Journal of Rare Earths ( IF 5.2 ) Pub Date : 2021-02-22 , DOI: 10.1016/j.jre.2021.02.010
Chao Dou 1 , Yanzhen Yin 1 , Fei Zheng 1 , Zhen Wang 1 , Shijia Sun 1 , Chen Hu 1 , Yang Che 1 , Bing Teng 1, 2, 3 , Degao Zhong 1, 2, 3
Affiliation  

A series of single phase, warm white light emitting phosphors, Gd(PxV1–x)O4:y at% Sm3+, with 1 at% Bi3+ doping concentration were synthesized by high temperature solid state method in this work. The experimental results indicate broadband cyan emission of Bi3+ and characteristic orange-red emission of Sm3+ can be effectively tuned by changing the ratios of PO43−/VO43− in Gd(PxV1–x)O4:1 at% Sm3+,1 at% Bi3+, and the energy transfer process among VO43−, Sm3+, Bi3+ also can be adjusted. Based on this, warm white light emitting can be realized by further optimizing the doping concentration of Sm3+ in the phosphors. At 423 K, the PL intensity of Gd(P0.7V0.3)O4:2 at% Sm3+,1 at% Bi3+ remains ~84.3% of the initial value at 293 K, while the measured quantum efficiency is 67.8%. EL spectrum analysis results of the fabricated white light emitting diode (wLED) based on a 310 nm UV-chip and Gd(P0.7V0.3)O4:2 at% Sm3+,1 at% Bi3+ phosphors imply low correlated color temperature (3132 K) and appropriate color-rending index (Ra = 82.7). These results demonstrate that Gd(P0.7V0.3)O4:2 at% Sm3+,1 at% Bi3+ is a good candidate for manufacturing UV-activated warm white light emitting diodes.



中文翻译:

单相Gd(PxV1−x)O4:y at% Sm3+,1 at% Bi3+荧光粉实现暖白光发射

本研究采用高温固相法合成了一系列单相暖白光荧光粉Gd(P x V 1– x )O 4 : y at% Sm 3+,掺杂浓度为1 at% Bi 3+ 。工作。实验结果表明,通过改变Gd(P x V 1– x )O中 PO 4 3- /VO 4 3-的比例,可以有效地调节Bi 3+的宽带青色发射和 Sm 3+的特征橙红色发射。4 :1 at% Sm 3+ ,1 at% Bi 3+,并且VO 4 3-、Sm 3+、Bi 3+之间的能量传递过程也可以调节。在此基础上,进一步优化荧光粉中Sm 3+的掺杂浓度,可以实现暖白光发射。在423 K时,Gd(P 0.7 V 0.3 )O 4 :2 at% Sm 3+ ,1 at% Bi 3+的PL强度保持在293 K时初始值的~84.3%,而实测量子效率为67.8 %。基于 310 nm UV 芯片和 Gd(P 0.7 V 0.3 )O 4 :2 at% Sm 3+制作的白光发光二极管 (wLED) 的 EL 光谱分析结果,1 at% Bi 3+荧光粉意味着低相关色温 (3132 K) 和适当的显色指数 ( Ra =  82.7)。这些结果表明,Gd(P 0.7 V 0.3 )O 4 :2 at% Sm 3+ ,1 at% Bi 3+是制造紫外激活暖白光发光二极管的良好候选者。

更新日期:2021-02-22
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