The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS₂) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS₂ nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS₂ flakes exhibit three preferred orientations, aligning with the $〈11\overline{2}0〉$ substrate directions due to strain minimization of a MoO₂ intermediate phase. Whereas MoS₂ grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS₂ is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis.

二维二硫化钼（MoS ₂）的依赖于层和形态的特性已在电子，光电子，传感和催化等广泛应用中确立了其相关性。了解如何控制材料的生长以实现所需的性能是针对特定应用量身定制材料的关键。在这项工作中，我们通过在邻近和轴向4H-SiC（0001）衬底上化学气相沉积研究了垂直站立的MoS ₂纳米片的生长。在这两种情况下，MoS ₂薄片均表现出三个优选方向，与$〈11\overline{\mathrm{2个}}0〉$MoO ₂中间相的应变最小化引起的基片方向。尽管在邻近SiC衬底上生长的MoS ₂表现出严格的近垂直排列，但是扫描电子显微镜和近边缘X射线吸收精细结构（NEXAFS）的测量结果表明，当MoS ₂在同轴SiC上生长时，其近乎垂直的取向。光发射光谱法和NEXAFS测量表明存在缺陷和无序的边缘，从而确定了该材料在传感和催化中的适用性。