The excitation spectrum of GaAs has been studied by reflection electron energy loss spectroscopy. In addition to dominant collective excitations, a series of single-electron transitions of a core Ga 3d electron to previously unknown unoccupied states located above the Fermi level by 1.25, 3.7, and 6.8 eV have been detected in the spectrum. It has been shown that the detected states appear near the ion core of Ga because of an increase in its effective charge at excitation. Since the detected electronic levels are equidistant, they can be described by a subnanometer spherical quantum dot model. It has been shown that one of the decay channels of the detected states involves the emission of ultraviolet radiation.

通过反射电子能量损失谱研究了GaAs的激发谱。除了主要的集体激发之外，在光谱中还检测到了核心Ga 3d电子向位于费米能级之上1.25、3.7和6.8 eV的以前未知的未占据状态的一系列单电子跃迁。已经表明，由于在激发时有效电荷的增加，检测到的状态出现在Ga的离子核附近。由于检测到的电子能级是等距的，因此可以用亚纳米球形量子点模型来描述它们。已经表明，所检测状态的衰减通道之一涉及紫外线辐射的发射。