Pulsed current–voltage characteristics have been measured for epitaxial SiC graphene under controlled lattice temperature conditions. The monolayer and AB stacked bilayer graphene is dry transferred on SiO₂. The measured characteristics of two-terminal samples with coplanar electrodes demonstrate non-ohmic behaviour up to intermediate-high fields. At high currents thermal effects come into play and soft damage of the samples takes place. Bilayer graphene samples withstand 20 kV cm⁻¹ electric field when few nanosecond voltages pulses are applied. The results are treated in terms of hole drift velocity estimated from the data on current under the assumption of uniform electric field and constant hole density. The highest velocity of ∼3.5–5 10⁶ cm s⁻¹ (∼1.5 10⁷ cm s⁻¹) is estimated for the bilayer (monolayer) graphene. The velocity results are interpreted with hot phonons. High frequency noise is measured at 10 GHz for the monolayer graphene and the associated shot noise is resolved.

已经在受控晶格温度条件下测量了外延SiC石墨烯的脉冲电流-电压特性。将单层和AB堆叠的双层石墨烯干转移到SiO _2上。具有共面电极的两端子样品的测量特性表明，直到中高电场，其非欧姆行为。在大电流下，会产生热效应，样品会发生软损坏。当施加几纳秒的电压脉冲时，双层石墨烯样品可承受20 kV cm ^-1的电场。在均匀电场和恒定空穴密度的假设下，根据从电流数据估算的空穴漂移速度对结果进行处理。最高速度〜3.5–5 10 ⁶ cm s对于双层（单层）石墨烯，估计为^-1（〜1.5 10 ⁷ cm s ^-1）。速度结果用热声子解释。对于单层石墨烯，在10 GHz处测量了高频噪声，并解决了相关的散粒噪声。