In₂S₃ (β-In₂S₃), semiconducting chalcogenide with desirable physicochemical properties, has fascinated researchers in photoelectrochemistry. Because of its wide band gap, In₂S₃ can utilize solar energy below 600 nm. However, rapid photogenerated electron–hole recombination and low quantum efficiency have limited the practical application of In₂S₃ in this field. In a two-step in situ hydrothermal process we introduced a narrow band gap semiconductor (ReS₂) below the In₂S₃ and constructed a direct Z-scheme heterostructure with nanoflower and honeycomb morphology. The formation of a direct Z-scheme heterostructure and coordination of the trap-like structure of the composite give a wider absorption range, higher migration and separation efficiency, and faster interfacial transfer speed than for pristine In₂S₃, and the photoelectrochemical performance is approximately three times better than that of pristine In₂S₃ at 1.23 V versus a reversible hydrogen electrode under sunlight. This method therefore provides a new prospect for optimizing the performance of In₂S₃ and applying the novel heterojunction.

在₂ š ₃（β-在₂小号₃在光电化学），半导体具有期望的物理化学性质硫族化物，已经研究人员着迷。由于其宽带隙，In ₂ S ₃可以利用600 nm以下的太阳能。然而，快速的光生电子-空穴复合和低量子效率限制了In ₂ S ₃在该领域的实际应用。在两步原位水热过程中，我们在In ₂ S ₃下方引入了窄带隙半导体（ReS ₂）并构建了具有纳米花和蜂窝状形态的直接Z方案异质结构。与原始In ₂ S ₃相比，直接Z型异质结构的形成和复合材料陷阱形结构的配位可提供更宽的吸收范围，更高的迁移和分离效率以及更快的界面转移速度，并且光电化学性能为与在阳光下可逆的氢电极相比，在1.23 V下的纯In ₂ S ₃约好三倍。因此，该方法为优化In ₂ S ₃的性能和应用新型异质结提供了新的前景。