Operation of semiconductor lasers in the 20–50 m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at λ = 26, …, 30 m at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses.

20–50年内半导体激光器的运行 带间激光二极管中的强非辐射复合以及基于GaAs的量子级联结构中的强晶格吸收，会阻碍m波长范围。在此，我们提出了一种基于多个HgTe量子阱的电泵浦激光二极管，该量子阱具有设计用于俄歇重组抑制的能带结构。使用一个综合模型来说明载流子的漂移和扩散，量子阱中电子和空穴的捕获，俄歇复合以及热效应，我们证明了在λ  = 26，…，30时 发射激光的可行性m在高达90 K的温度下。对于微秒持续时间的脉冲，脉冲中的输出功率可以达到8 mW。