Gallium oxide (Ga₂O₃) has become a viable candidate for certain types of high-power devices due to its large energy bandgap of 4.9 eV, which has attracted widespread attention. In particular, Ga₂O₃ nanowire structures have more unique properties due to its larger specific surface area for the high performance solar-blind ultraviolet (UV) photodetectors. In this work, the ultrafine Ga₂O₃ nanowire network structure is obtained on the sapphire substrate with an Au catalyst by chemical vapor deposition method at 960 C for 10 min. We can confirm that the growth of the nanowire follows the vapor–liquid–solid growth mechanism and is a β-type Ga₂O₃ crystal through the performance test results. A solar-blind UV photodetector based on the nanowires network shows an apparent response to solar-blind UV light and almost no response to 365 nm wavelength. Furthermore, the on–off ratio, light responsivity, and response time are also measured under a 254 nm wavelength UV light irradiation, respectively. This work provides a new preparation method to improve the performance of solar-blind UV photodetector.

氧化镓（Ga ₂ O ₃）由于其4.9 eV的大能带隙而已成为某些类型大功率器件的可行候选物，引起了广泛关注。特别地，Ga ₂ O ₃纳米线结构由于用于高性能太阳盲紫外线（UV）光电探测器的较大的比表面积而具有更独特的性质。在这项工作中，通过化学气相沉积法在960℃下10分钟，在具有Au催化剂的蓝宝石衬底上获得了超细的Ga ₂ O ₃纳米线网络结构。我们可以确认，纳米线的生长遵循气-液-固生长机制，并且是一种β型Ga _2。通过O ₃晶体的性能测试结果。基于纳米线网络的日盲UV光电探测器显示出对日盲UV光的明显响应，而对365 nm波长几乎没有响应。此外，还分别在254 nm波长的紫外线照射下测量了开/关比，光响应度和响应时间。这项工作提供了一种新的制备方法，以提高太阳盲紫外光电探测器的性能。