In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, blue, and green emission bands from n-type (010) Ga₂O₃ films grown by metalorganic vapor phase epitaxy induced by annealing at different temperatures under O₂ ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating the increase in the formation of at least one non-radiative defect type. Simultaneously, the PL yield ratios of blue/UV and green/UV increase, suggesting that defects associated with these emissions increase in concentration with O₂ annealing. Utilizing the different absorption coefficients of 240 and 266 nm polarization-dependent excitation, we find activation energy for the generation of non-radiative defects of 1.34 eV in the bulk but 2.53 eV near the surface. We also deduce activation energies for the green emission-related defects of 1.20 eV near the surface and 2.21 eV at low temperatures and 0.74 eV at high temperatures through the films, whereas the blue-related defects have activation energy in the range 0.72–0.77 eV for all depths. Lastly, we observe hillock surface morphologies and Cr diffusion from the substrate into the film for temperatures above 1050 C. These observations are consistent with the formation and diffusion of V _Ga and its complexes as a dominant process during O₂ annealing, but further work will be necessary to determine which defects and complexes provide radiative and non-radiative recombination channels and the detailed kinetic processes occurring at surfaces and in bulk amongst defect populations.

在这项工作中，我们使用光致发光光谱（PL）来监测在不同温度下于O退火引起的金属有机气相外延生长的n型（010）Ga ₂ O ₃膜的UV，蓝色和绿色发射带的变化。₂环境。连续较高温度下的退火会以几乎相同的速率降低总PL产量和UV强度，表明至少一种非辐射缺陷类型的形成增加。同时，蓝色/ UV和绿色/ UV的PL产率比增加，这表明与这些排放有关的缺陷随着O ₂浓度的增加而增加。退火。利用240和266 nm偏振相关激发的不同吸收系数，我们发现了活化能，用于在本体中产生1.34 eV的非辐射缺陷，而在表面附近产生2.53 eV。我们还通过薄膜推断出与绿色发射相关的缺陷的活化能为表层附近的1.20 eV，在低温下为2.21 eV，在高温下为0.74 eV，而与蓝色有关的缺陷的活化能为0.72-0.77 eV适用于所有深度。最后，我们观察到在1050 C以上的温度下，小丘的表面形态和Cr从基底扩散到薄膜中。这些观察结果与V _Ga及其配合物在O ₂期间的主要过程的形成和扩散是一致的。 退火，但是需要进一步的工作来确定哪些缺陷和复合物提供了辐射和非辐射的重组通道，以及在表面和缺陷人群中大量发生的详细动力学过程。