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Design and analysis of a graphene-based Schottky junction solar cell with core/shell quantum dots as spectral downshifter
Journal of the Optical Society of America B ( IF 1.9 ) Pub Date : 2021-02-22 , DOI: 10.1364/josab.414889
Gholamhossein Haghighat 1 , Kamyar Saghafi 1
Affiliation  

We theoretically design and study a structure of graphene/intrinsic amorphous-silicon Schottky junction solar cell (Gr/i-a-Si_SJSC) with top core/shell quantum dots (CSQDs). A physical model incorporated with optoelectrical characteristics is developed to optimize the structure’s electrical performance by modifying the graphene work function, temperature, and CSQD radius. Simulations show that the conversion efficiency of Gr/i-a-Si_SJSC is increased by increasing the graphene work function, raising the core radius and shell thickness of CSQD and decreasing the temperature. The results reveal that with an appropriate choice of design parameter in an optimized structure, short-circuit current density of ${16.2}\;{{\rm mA/cm}^2}$, open-circuit voltage of 0.8 V, fill factor of 75.06%, and calculated power conversion efficiency of 9.93% are obtained.

中文翻译:

基于核/壳量子点作为光谱下移器的基于石墨烯的肖特基结太阳能电池的设计与分析

我们从理论上设计和研究了具有顶部核/壳量子点(CSQDs)的石墨烯/本征非晶硅肖特基结太阳能电池(Gr / ia-Si_SJSC)的结构。通过修改石墨烯的功函数,温度和CSQD半径,开发了一种具有光电特性的物理模型,以优化结构的电性能。仿真表明,通过增加石墨烯功函数,增加CSQD的核半径和壳厚度并降低温度,可以提高Gr / ia-Si_SJSC的转化效率。结果表明,与设计参数的适当选择以优化的结构中,短路电流密度$ {16.2} \; {{\ RM毫安/厘米} ^ 2} $,开路电压为0.8 V,填充系数为75.06%,计算出的功率转换效率为9.93%。
更新日期:2021-03-01
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