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The Insulator–Insulator and the Insulator–Mixed‐Metal–Insulator Transitions in Self‐Heated AlxV1−xO2 Single Crystals and Their Visualization
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-02-19 , DOI: 10.1002/pssa.202000820 Bertina Fisher 1 , Larisa Patlagan 1 , Anna Eyal 1 , George M. Reisner 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-02-19 , DOI: 10.1002/pssa.202000820 Bertina Fisher 1 , Larisa Patlagan 1 , Anna Eyal 1 , George M. Reisner 1
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In addition to the well‐known insulator–metal transition above room temperature in pure VO2, AlxV1−xO2 exhibits an insulator–insulator transition at temperatures above room temperature and below the insulator–metal transition temperature, consisting of an increase in resistance by a factor ≤2. The wealth of static and dynamic domain structures discovered in the mixed‐metal‐insulator state of free‐standing, high‐quality, pure VO2 single crystals via optical microscopy synchronous with dc I–V tracing has inspired the use of this technique in these more complex materials. Reported herein are I(V) measurements conducted on crystals of AlxV1−xO2 (0.007≤ × ≤0.02) at various ambient temperatures (To). Prominent features (switching) on the I(V) loops are easily identified with the onset of the insulator–insulator and of the mixed‐metal‐insulator states, both induced by self‐heating (Joule heating). The switching results from instabilities of two different types of negative differential resistance regimes. The applied power at the onset of each switching scales with the excess temperature above ambient. For both transitions, optical microscopy synchronous with dc I–V tracing visualizes the expansion of each phase within the background upon the current increasing, and its contraction upon the current decreasing.
中文翻译：
自热AlxV1-xO2单晶的绝缘体-绝缘体和绝缘体-金属-绝缘体转变及其可视化
除了在纯VO 2中高于室温的众所周知的绝缘体-金属转变以外，Al x V 1- x O 2在高于室温且低于绝缘体-金属转变温度的温度下还表现出绝缘体-绝缘子的转变，其中包括电阻增加≤2倍。通过与直流I – V跟踪同步的光学显微镜，在独立，高质量，纯净的VO 2单晶的混合金属绝缘体状态下发现的大量静态和动态畴结构，启发了该技术的应用。更复杂的材料。在此报告的是I（V）测量是在各种环境温度（T o）下对Al x V 1- x O 2（0.007≤ × ≤0.02）的晶体进行的。I（V）回路上的突出特征（开关）很容易通过绝缘子-绝缘子和混合金属-绝缘子状态的开始来识别，这两种状态都是由自热（焦耳加热）引起的。切换是由两种不同类型的负差分电阻方案的不稳定性引起的。在每个开关开始时施加的功率会随着环境温度高于环境温度而变化。对于这两种转换，光学显微镜与dc I – V同步 跟踪显示了电流增加时背景中各相的膨胀，以及电流减小时其收缩。
更新日期：2021-02-19
中文翻译：
自热AlxV1-xO2单晶的绝缘体-绝缘体和绝缘体-金属-绝缘体转变及其可视化
除了在纯VO 2中高于室温的众所周知的绝缘体-金属转变以外，Al x V 1- x O 2在高于室温且低于绝缘体-金属转变温度的温度下还表现出绝缘体-绝缘子的转变，其中包括电阻增加≤2倍。通过与直流I – V跟踪同步的光学显微镜，在独立，高质量，纯净的VO 2单晶的混合金属绝缘体状态下发现的大量静态和动态畴结构，启发了该技术的应用。更复杂的材料。在此报告的是I（V）测量是在各种环境温度（T o）下对Al x V 1- x O 2（0.007≤ × ≤0.02）的晶体进行的。I（V）回路上的突出特征（开关）很容易通过绝缘子-绝缘子和混合金属-绝缘子状态的开始来识别，这两种状态都是由自热（焦耳加热）引起的。切换是由两种不同类型的负差分电阻方案的不稳定性引起的。在每个开关开始时施加的功率会随着环境温度高于环境温度而变化。对于这两种转换，光学显微镜与dc I – V同步 跟踪显示了电流增加时背景中各相的膨胀，以及电流减小时其收缩。
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