Integration of embedded dielectric structures with crystalline III-V materials has generated significant interest, due to a host of important applications and material improvements that are central to high performance optoelectronic devices. The core challenge is the production of high-quality crystalline layers grown above embedded dielectric materials, requiring the growth processes of both lateral epitaxial overgrowth (LEO) and coalescence. In this review article, we provide a detailed and up-to-date description of the recent advances in both LEO and coalescence in III-V materials, from its extension to molecular beam epitaxial growth and high-quality coalescence in InP and GaAs to emerging applications that utilize encapsulated air voids to enhance optical devices. We also explore the epitaxial integration of other materials, particularly metals, with III-V semiconductors.

由于许多重要的应用和材料改进对高性能光电器件至关重要，因此嵌入式介电结构与晶体 III-V 材料的集成引起了极大的兴趣。核心挑战是在嵌入的介电材料上方生产高质量的晶体层，需要横向外延过度生长 (LEO) 和聚结的生长过程。在这篇综述文章中，我们详细和最新描述了 LEO 和 III-V 族材料聚结的最新进展，从其扩展到分子束外延生长和 InP 和 GaAs 中的高质量聚结到新兴利用封装的空气空隙来增强光学器件的应用。我们还探索了其他材料的外延集成，