In this work, we propose a Schottky diode that uses MoC alloy as a Schottky metal to form a Schottky contact. Unlike existing diode designs based on Mo/4H-SiC, the design presented here shows near-ideal behavior at high annealing temperatures. The Schottky interface obtained was studied at different annealing temperatures, and the electrical properties were analyzed by temperature-dependent current and voltage (I-V) and capacitor voltage (CV) measurements. When annealing at 900 °C, its ideality factor was 1.03 and the barrier height reached 1.16 eV. There was no significant change in the ideality factor and barrier height while analyzing the electrical characteristics at different test temperatures. These results show that the structure has good stability at high annealing temperatures. At the same time, the morphology of the metal-semiconductor interface was observed through a transmission electron microscope and combined with the analysis of electrical characteristics, and it can be concluded that the structure has high-temperature annealing stability.

在这项工作中，我们提出了一种肖特基二极管，该二极管使用Mo C合金作为肖特基金属来形成肖特基接触。与现有的基于Mo / 4H-SiC的二极管设计不同，此处介绍的设计在高退火温度下显示出近乎理想的性能。研究了在不同退火温度下获得的肖特基界面，并通过与温度相关的电流和电压（IV）和电容器电压（CV）测量。在900°C退火时，其理想因子为1.03，势垒高度达到1.16 eV。分析不同测试温度下的电气特性时，理想因子和势垒高度没有明显变化。这些结果表明该结构在高退火温度下具有良好的稳定性。同时，通过透射电镜观察了金属-半导体界面的形貌，并结合电学特性进行分析，可以得出该结构具有高温退火稳定性。