Organic thin-film transistors (OTFTs) are studied intensively for realizing practical applications of flexible or large-area circuits, but rapid degradation of OTFTs due to stress voltage or reaction with water vapor or oxygen in the air limits their lifetime. In order to analyze the cause of rapid bias-stress degradation, we propose a method that separates the cause of threshold voltage (V _th) shift into insulator carrier trapping (ICT) and semiconductor carrier trapping components. The experimental results show that the ICT components account for nearly 50% of the total V _th shift in n-type OTFTs, while the ICT-induced V _th shifts is about 20% of the total V _th shift in p-type OTFTs regardless of the insulator materials: SAM or parylene. The experimental results suggest that the short lifetime of the n-type OTFTs with SAM-based insulator is caused by the instability of the SAM-based insulator due to ICT. In addition, the instability of the p-type OTFTs with SAM-based insulator is discussed based on measurement, and as a result, capacitance shift due to ICT may also affect the degradation of highly biased p-type OTFTs.

为了实现柔性或大面积电路的实际应用，人们对有机薄膜晶体管 (OTFT) 进行了深入研究，但由于应力电压或与空气中的水蒸气或氧气反应而导致 OTFT 的快速退化限制了它们的寿命。为了分析偏置应力快速退化的原因，我们提出了一种将阈值电压 ( V _th ) 漂移的原因分为绝缘体载流子俘获 (ICT) 和半导体载流子俘获分量的方法。实验结果表明，在 n 型 OTFT 中，ICT 组件占总V _th偏移的近 50% ，而 ICT 引起的V _th偏移约为总V _{th 的}20%无论绝缘体材料如何：SAM 或聚对二甲苯，p 型 OTFT 都会发生变化。实验结果表明，具有 SAM 基绝缘体的 n 型 OTFT 的短寿命是由 ICT 导致的 SAM 基绝缘体的不稳定性引起的。此外，基于测量讨论了具有 SAM 绝缘体的 p 型 OTFT 的不稳定性，因此，由于 ICT 引起的电容漂移也可能影响高度偏置的 p 型 OTFT 的退化。