当前位置: X-MOL 学术Jpn. J. Appl. Phys. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures
Japanese Journal of Applied Physics ( IF 1.5 ) Pub Date : 2021-02-19 , DOI: 10.35848/1347-4065/abe3d8
Masahiro Hara , Mitsuaki Kaneko , Tsunenobu Kimoto

The barrier heights in Ti/ and Ni/n-SiC Schottky barrier diodes (SBDs) in a wide range of the donor density (N d = 2 1017–1 1019 cm−3) were investigated. The forward current–voltage characteristics in the heavily-doped SBDs (N d > 2 1017 cm−3) are described by the thermionic field emission (TFE) model, which includes an electron tunneling induced by the high electric field (> MV cm−1) at the Schottky interface. The high electric field also causes significant image force lowering (Δϕ ∼ 0.2 eV) in the heavily-doped SBDs (N d = 1 1019 cm−3). Through the analysis carefully considering such strong image force lowering, the same slope of the barrier height versus the metal work function plot (S ∼ 0.7) is obtained regardless of N d. This indicates that metal/SiC interfaces are nearly free from Fermi-level pinning independent of N d.



中文翻译:

金属/重掺杂 SiC 肖特基结构中的近费米能级无钉扎界面

研究了在很宽的施主密度 ( N d = 2 10 17 –1 10 19 cm -3 )范围内的 Ti/ 和 Ni/n-SiC 肖特基势垒二极管 (SBD) 的势垒高度。重掺杂 SBD ( N d > 2 10 17 cm -3 ) 中的正向电流-电压特性由热电子场发射 (TFE) 模型描述,该模型包括由高电场 (> MV cm) 引起的电子隧穿−1 ) 在肖特基界面。高电场还导致重掺杂 SBD ( N d = 1 10 19厘米-3 )。通过仔细考虑如此强烈的图像力降低的分析,无论N d多少,都获得了相同的势垒高度与金属功函数图的斜率 ( S ~ 0.7) 。这表明金属/SiC 界面几乎没有独立于N d的费米能级钉扎。

更新日期:2021-02-19
down
wechat
bug