The barrier heights in Ti/ and Ni/n-SiC Schottky barrier diodes (SBDs) in a wide range of the donor density (N _d = 2 10¹⁷–1 10¹⁹ cm⁻³) were investigated. The forward current–voltage characteristics in the heavily-doped SBDs (N _d > 2 10¹⁷ cm⁻³) are described by the thermionic field emission (TFE) model, which includes an electron tunneling induced by the high electric field (> MV cm⁻¹) at the Schottky interface. The high electric field also causes significant image force lowering (Δϕ ∼ 0.2 eV) in the heavily-doped SBDs (N _d = 1 10¹⁹ cm⁻³). Through the analysis carefully considering such strong image force lowering, the same slope of the barrier height versus the metal work function plot (S ∼ 0.7) is obtained regardless of N _d. This indicates that metal/SiC interfaces are nearly free from Fermi-level pinning independent of N _d.

研究了在很宽的施主密度 ( N _d = 2 10 ¹⁷ –1 10 ¹⁹ cm ^-3 )范围内的 Ti/ 和 Ni/n-SiC 肖特基势垒二极管 (SBD) 的势垒高度。重掺杂 SBD ( N _d > 2 10 ¹⁷ cm ^-3 ) 中的正向电流-电压特性由热电子场发射 (TFE) 模型描述，该模型包括由高电场 (> MV cm) 引起的电子隧穿⁻¹ ) 在肖特基界面。高电场还导致重掺杂 SBD ( N d ₌ 1 10 ¹⁹厘米^-3 )。通过仔细考虑如此强烈的图像力降低的分析，无论N _{d多少，都获得了相同的势垒高度与金属功函数图的斜率 (} S ~ 0.7) 。这表明金属/SiC 界面几乎没有独立于N _d的费米能级钉扎。