Raman scattering spectroscopy was applied to characterize polycrystalline germanium (Ge) on noncrystalline substrates fabricated by solid-phase crystallization and metal-induced crystallization (MIC) using copper (Cu) and tin (Sn) as the catalyzer. The subject was focused on the material for thin-film transistors in which the precursors, with the thickness of only 15nm, were deposited by sputtering. The optical phonon mode exhibited considerable asymmetry and was separated into the following three components: crystal, low-dimensional nanosized crystallite (NC), and amorphous. The width and frequency shift of the crystal component were analyzed using the phonon confinement effect, thermal stress, and Sn composition. The transition from amorphous to the NC state was associated with the disorder in the precursor. The addition of a restrained amount of Cu led to the evident progress of crystallization and simultaneous suppression of the NC transition. The Sn composition of 3at% was insufficient to exhibit a noticeable MIC effect.

拉曼散射光谱用于表征通过固相结晶和金属诱导结晶 (MIC) 制造的非晶衬底上的多晶锗 (Ge)，使用铜 (Cu) 和锡 (Sn) 作为催化剂。本课题重点研究薄膜晶体管材料，其中前驱体通过溅射沉积，厚度仅为 15nm。光学声子模式表现出相当大的不对称性，分为以下三个成分：晶体、低维纳米微晶 (NC) 和无定形。使用声子限制效应、热应力和 Sn 成分分析晶体组件的宽度和频移。从非晶态到 NC 态的转变与前体的无序有关。添加限制量的Cu导致结晶的明显进展和NC转变的同时抑制。3at%的Sn成分不足以表现出显着的MIC效应。