An (AlGa)₂O₃ back barrier was employed for Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) with a Si-implanted n-Ga₂O₃ channel layer. The insertion of the back barrier led to strong confinement of electrons in the channel layer, and a shallower pinch-off characteristic with shifting a threshold gate voltage by +8 V was attained for the MOSFET with the back barrier compared to the conventional one without it. The excellent gate controllability represented by a subthreshold slope of 129 mV/decade was also achieved for the back-barrier MOSFET; whereas it was 337 mV/decade for the non-back-barrier one.

中文翻译：

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（AlGa）₂ O ₃背势垒对带有硅注入沟道的β- Ga ₂ O ₃金属氧化物半导体场效应晶体管器件特性的影响

（AlGa）₂ O ₃背势垒用于具有注入了Si的n -Ga ₂ O ₃沟道层的Ga ₂ O ₃金属氧化物半导体场效应晶体管（MOSFET）。背势垒的插入导致电子在沟道层中受到强烈限制，与没有背势垒的MOSFET相比，具有背势垒的MOSFET通过将阈值栅极电压偏移+8 V而获得较浅的夹断特性。 。对于后势垒MOSFET，也实现了以亚阈值斜率129 mV / decade表示的出色的栅极可控性。而无后向势垒则为337 mV /十倍频。