We elucidate the carrier transport mechanism from the p⁺-layer (metallic-conduction) to the n-layer (band-conduction) in a diamond p⁺–n junction, which is the basic structure of diamond devices. We fabricate Schottky–pn diodes containing p⁺–n junctions and analyze the temperature dependence of electrical properties in the forward bias region. At temperatures higher than the cryogenic region, free holes transport from the p⁺-layer to the n-layer. In the cryogenic region, which is insufficient to excite holes to the valence band, the direct transport of holes from the effective carrier conduction level in the p⁺-layer to the n-layer by tunneling becomes dominant.

我们阐明了金刚石 p ⁺ -n 结中从 p ⁺层（金属传导）到 n 层（带传导）的载流子传输机制，这是金刚石器件的基本结构。我们制造了包含 p ⁺ –n 结的肖特基-pn 二极管，并分析了正向偏置区域中电特性的温度依赖性。在高于低温区的温度下，自由空穴从 p ⁺层传输到 n 层。在不足以将空穴激发到价带的低温区域中，空穴从 p ⁺层中的有效载流子传导能级通过隧穿直接传输到 n 层成为主导。