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Carrier transport mechanism of diamond p+–n junction at low temperature using Schottky–pn junction structure
Japanese Journal of Applied Physics ( IF 1.5 ) Pub Date : 2021-02-19 , DOI: 10.35848/1347-4065/abe33f
Ayumu Karasawa 1 , Toshiharu Makino 1, 2 , Aboulaye Traore 1 , Hiromitsu Kato 2 , Masahiko Ogura 2 , Yukako Kato 2 , Daisuke Takeuchi 2 , Satoshi Yamasaki 1, 2, 3 , Takeaki Sakurai 1
Affiliation  

We elucidate the carrier transport mechanism from the p+-layer (metallic-conduction) to the n-layer (band-conduction) in a diamond p+–n junction, which is the basic structure of diamond devices. We fabricate Schottky–pn diodes containing p+–n junctions and analyze the temperature dependence of electrical properties in the forward bias region. At temperatures higher than the cryogenic region, free holes transport from the p+-layer to the n-layer. In the cryogenic region, which is insufficient to excite holes to the valence band, the direct transport of holes from the effective carrier conduction level in the p+-layer to the n-layer by tunneling becomes dominant.



中文翻译:

基于肖特基-pn结结构的金刚石p + -n结低温载流子传输机制

我们阐明了金刚石 p + -n 结中从 p +层(金属传导)到 n 层(带传导)的载流子传输机制,这是金刚石器件的基本结构。我们制造了包含 p + –n 结的肖特基-pn 二极管,并分析了正向偏置区域中电特性的温度依赖性。在高于低温区的温度下,自由空穴从 p +层传输到 n 层。在不足以将空穴激发到价带的低温区域中,空穴从 p +层中的有效载流子传导能级通过隧穿直接传输到 n 层成为主导。

更新日期:2021-02-19
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