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Resistance Switching Behavior in Rectangle-Nano-Pattern SrTiO3 Induced by Simple Annealing
Materials ( IF 3.1 ) Pub Date : 2019-11-09 , DOI: 10.3390/ma12223698
Xiaxia Liao , Yufeng Zhang , Jiaou Wang , Junyong Kang , Jinbin Zhang , Jizheng Wang , Jincheng Zheng , Huiqiong Wang

The tunability of semi-conductivity in SrTiO3 single crystal substrates has been realized by a simple encapsulated annealing method under argon atmosphere. This high temperature annealing-induced property changes are characterized by the transmission spectra, scanning electron microscopy (SEM) and synchrotron-based X-ray absorption (XAS). We find the optical property is strongly influenced by the annealing time (with significant decrease of transmittance). A sub gap absorption at ~427 nm is detected which is attributed to the introduction of oxygen vacancy. Interestingly, in the SEM images, annealing-induced regularly rectangle nano-patterns are directly observed which is contributed to the conducting filaments. The XAS of O K-edge spectra shows the changes of electronic structure by annealing. Very importantly, resistance switching response is displayed in the annealed SrTiO3 single crystal. This suggests a possible simplified route to tune the conductivity of SrTiO3 and further develop novel resistance switching materials.

中文翻译:

简单退火在矩形纳米SrTiO3中的电阻转换行为

SrTiO3单晶衬底中半导体的可调谐性已经通过在氩气气氛下通过简单的封装退火方法实现了。这种高温退火引起的性能变化的特征在于透射光谱,扫描电子显微镜(SEM)和基于同步加速器的X射线吸收(XAS)。我们发现光学性能受退火时间的影响很大(透射率显着降低)。在〜427 nm处检测到一个亚间隙吸收,这归因于氧空位的引入。有趣的是,在SEM图像中,直接观察到退火诱导的规则矩形纳米图案,这有助于导电丝。O K边缘光谱的XAS显示了退火引起的电子结构的变化。非常重要的是 在退火的SrTiO3单晶中显示出电阻切换响应。这表明可能有一条简化的途径来调节SrTiO3的电导率,并进一步开发新颖的电阻开关材料。
更新日期:2019-11-09
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