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56 Gb/s NRZ O-Band Hybrid BiCMOS-Silicon Photonics Receiver Using Ge/si Avalanche Photodiode
Journal of Lightwave Technology ( IF 4.1 ) Pub Date : 2020-11-16 , DOI: 10.1109/jlt.2020.3038361
Srinivasan Ashwyn Srinivasan , Joris Lambrecht , Davide Guermandi , Sebastien Lardenois , Mathias Berciano , Philippe Absil , Johan Bauwelinck , Xin Yin , Marianna Pantouvaki , Joris Van Campenhout

We report on hybrid BiCMOS-Silicon photonics receivers with waveguide coupled Ge/Si avalanche photodiodes, designed in a lateral separate charge absorption multiplication configuration. We demonstrate optical modulation amplitude sensitivities of −14.4 dBm for error-free operation at 50 Gb/s and −18.6 dBm under the KP4-FEC limit at 56 Gb/s using NRZ-OOK modulation. An in-depth analysis of the receiver sensitivity is carried out to understand the impact of dark current, and to identify pathways for further improvements. The demonstration of such highly sensitive receivers, supported with a receiver model, paves the way to improve optical link margins at 50 Gb/s and beyond.

中文翻译:

使用Ge / si雪崩光电二极管的56 Gb / s NRZ O波段混合BiCMOS-硅光子接收器

我们报告了在侧向分离的电荷吸收倍增配置中设计的具有波导耦合Ge / Si雪崩光电二极管的混合BiCMOS-硅光子接收器。对于NRZ-OOK调制,我们证明了在50 Gb / s时无错误操作的光调制幅度灵敏度为-14.4 dBm,在KP4-FEC限制为56 Gb / s时为-18.6 dBm。对接收器灵敏度进行了深入分析,以了解暗电流的影响,并确定进一步改善的途径。此类高灵敏接收器的演示得到了接收器模型的支持,为提高50 Gb / s或更高的光链路余量铺平了道路。
更新日期:2020-11-16
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