We have investigated the anomalous Hall effect (AHE) of a ferrimagnetic GdFeCo film with perpendicular magnetic anisotropy. In the vicinity of magnetization compensation temperature T_M, the peak structure or triple loop of the Hall resistance loops is mainly caused by the opposite magnetic moments of the two sublattices of Gd and FeCo, and that can be explained by the mechanism of the two-channel AHE. Furthermore, we demonstrated that the transport properties of the GdFeCo film can be manipulated by ionic liquid gating. When the gate voltage is −4 V, the T_M of the GdFeCo film was changed up to 29 K. Our research provides experimental evidence for the design of novel electronic devices.

中文翻译：

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铁磁性GdFeCo合金中异常的霍尔效应

我们研究了具有垂直磁各向异性的亚铁磁GdFeCo薄膜的异常霍尔效应（AHE）。在磁化补偿温度T _M附近，霍尔电阻环路的峰结构或三重环路主要是由Gd和FeCo的两个子晶格的相反磁矩引起的，这可以通过以下两个机理来解释：频道AHE。此外，我们证明了GdFeCo膜的传输性能可以通过离子液体门控来控制。当栅极电压为−4 V时，GdFeCo膜的T _M改变为29K。我们的研究为新型电子器件的设计提供了实验证据。