AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ∼5 eV consistent with sp² bonding. The MISHEMTs exhibit a low off-state current of 1 × 10⁻⁸mA/mm, a high on/off current ratio of 10⁹, a threshold voltage of −2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of −2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (D_it) is estimated to be less than 8.49 × 10¹¹ cm⁻²eV⁻¹. Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.

中文翻译：

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AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管（MISHEMT），使用等离子沉积BN作为栅极电介质

AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管（MISHEMT）在具有10 nm氮化硼（BN）层的Si衬底上制造，该层是通过电子回旋共振微波等离子体化学气相沉积法沉积的栅极电介质。通过X射线光电子能谱（XPS）和紫外光电子能谱研究了BN / GaN界面的材料特性。B1s XPS能量损失引起的BN带隙约为5 eV，与sp ²键合一致。MISHEMT具有1×10 ^-8 mA / mm的低关态电流，高开/关电流比10 ⁹，阈值电压为-2.76 V，栅极电压为-2.1 V且漏极电压为1 V时最大跨导为32 mS / mm，亚阈值摆幅为69.1 mV / dec，导通电阻为12.75Ω ·毫米。估计界面态密度（D _it）小于8.49×10 ¹¹  cm ^-2 eV ^-1。通过从300 K到500 K的温度相关电流-电压测量研究了栅极泄漏电流的机制。最大击穿电场不小于8.4 MV / cm。Poole-Frenkel发射和Fowler-Nordheim隧穿分别表示为在低电场和高电场下通过BN栅极电介质的栅极泄漏的主要机理。