Efficient p-type doping of III-nitride materials is notoriously difficult due to their large bandgaps, intrinsic n-type doping, and the large ionization energy of acceptors. Specifically, aluminum-containing nitrides such as AlN and AlGaN have demonstrated low p-type conductivity, which increases device resistances and reduces carrier injection in optoelectronic applications. Dilute-anion III-nitride materials are a promising solution for addressing this issue and increasing the activation efficiency of p-type dopants. The upward movement of the valence bands in these materials reduces the ionization energy of the dopants, allowing for enhanced p-type conductivity in comparison to the conventional nitrides. Incorporation of a dilute-arsenic impurity into AlN is hypothesized to significantly reduce the ionization energy of Mg-acceptors from 500 meV to 286 meV, allowing for a two-order magnitude increase in activation efficiency in 6.25%-As AlNAs over that of AlN.

中文翻译：

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稀阴离子III族氮化物中空穴掺杂的前景

众所周知，由于III型氮化物材料的大带隙，固有的n型掺杂以及受体的大电离能，因此难以进行有效的p型掺杂。具体而言，含铝的氮化物（如AlN和AlGaN）表现出低p型导电性，这会增加器件电阻并减少光电应用中的载流子注入。稀阴离子III型氮化物材料是解决该问题并提高p型掺杂剂活化效率的有前途的解决方案。在这些材料中，价带的向上运动降低了掺杂剂的电离能，与传统的氮化物相比，可以增强p型电导率。