To improve the power and RF performance of the high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructure junction, in this paper, a sandwich structure consisting of gate field plate, SiN passivation layer, and notch structure is proposed. The notch structure at the AlGaN barrier layer between the gate and drain is formed by the Inductively Coupled Plasma etching system (ICP), and the notch has a depth of 15 nm. The dual-suppression of the peak electric field contributes to the breakdown voltage of 91 V, which is a 152.8% improvement compared with the conventional HEMT. The decrease of C_gd due to increase of distance between the gate electrode and the lower surface of the depletion layer contributes to the cut-off frequency of 24.1 GHz, which is an 8% improvement. Thus, this composite-structure HEMT has a JFOM of 2.2 THz V, it is an 84.6% improvement compared with the conventional gate field plate HEMT. A well suppression of current collapse is also achieved. It has potential in high power and RF applications.

为了提高基于AlGaN / GaN异质结的高电子迁移率晶体管（HEMT）的功率和RF性能，本文提出了一种由栅场板，SiN钝化层和缺口结构组成的夹心结构。栅极和漏极之间的AlGaN势垒层处的切口结构是通过感应耦合等离子体蚀刻系统（ICP）形成的，该切口的深度为15 nm。峰值电场的双重抑制使击穿电压达到91 V，与传统HEMT相比提高了152.8％。C _gd的降低由于栅电极和耗尽层下表面之间的距离增加而导致的截止频率为24.1 GHz，提高了8％。因此，这种复合结构的HEMT的JFOM为2.2 THz V，与传统的栅极场板HEMT相比，提高了84.6％。还可以很好地抑制电流崩溃。它在高功率和射频应用中具有潜力。