当前位置: X-MOL 学术Solid State Commun. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
An improved empirical model for a semiconductor’s velocity-field characteristic applied to gallium arsenide
Solid State Communications ( IF 2.1 ) Pub Date : 2021-02-19 , DOI: 10.1016/j.ssc.2021.114240
John Chilleri , Yana Wang , Michael S. Shur , Stephen K. O’Leary

An effective empirical model for the velocity-field characteristic associated with a semiconductor offers the community of semiconductor device engineers with a tool that will ultimately allow them to relate key features of a semiconductor’s velocity-field characteristic with the resultant device performance. Noting the limitations of previously devised empirical models for a semiconductor’s velocity-field characteristic, we have developed an alternate approach. In particular, building upon the empirical velocity-field characteristic model of Eastman et al. related to high-field domains (Eastman et al., 1980), we develop an approach wherein the model’s internal adjustable parameters may be directly tied with the velocity-field characteristic’s observable features. We then apply this approach to the specific case of gallium arsenide, a contrast with results gleaned from Monte Carlo electron transport simulations being used to show that the resultant fits are indeed quite satisfactory. A comparison with other empirical velocity-field characteristic modeling approaches is offered, our approach being shown to be more effective than the other ones in several regards. Finally, within the framework of this empirical model, a means of evaluating the maximum value of the negative differential mobility associated with a given velocity-field characteristic is provided, such a value being of interest to those who wish to draw upon the aforementioned high-field domain effects.



中文翻译:

应用于砷化镓的半导体速度场特性的改进经验模型

与半导体相关的速度场特性的有效经验模型为半导体器件工程师群体提供了一种工具,该工具将最终使他们将半导体速度场特性的关键特征与最终的器件性能相关联。注意到先前为半导体速度场特性设计的经验模型的局限性,我们开发了一种替代方法。特别是,建立在伊士曼等人的经验速度场特征模型的基​​础上。关于高场域(Eastman等,1980),我们开发了一种方法,其中模型的内部可调参数可以直接与速度场特征的可观察特征联系在一起。然后,我们将这种方法应用于砷化镓的具体情况,与从蒙特卡洛电子传输模拟收集的结果的对比表明,所得到的拟合度确实非常令人满意。提供了与其他经验速度场特征建模方法的比较,我们的方法在某些方面被证明比其他方法更有效。最终,在该经验模型的框架内,提供了一种评估与给定速度场特征相关的负微分迁移率最大值的方法,该值对于那些希望利用上述高灵敏度的人感兴趣。场域效应。提供了与其他经验速度场特征建模方法的比较,我们的方法在某些方面被证明比其他方法更有效。最终,在该经验模型的框架内,提供了一种评估与给定速度场特征相关的负微分迁移率最大值的方法,该值对于那些希望利用上述高灵敏度的人感兴趣。场域效应。提供了与其他经验速度场特征建模方法的比较,我们的方法在某些方面被证明比其他方法更有效。最终,在该经验模型的框架内,提供了一种评估与给定速度场特征相关的负微分迁移率最大值的方法,该值对于那些希望利用上述高灵敏度的人感兴趣。场域效应。

更新日期:2021-03-18
down
wechat
bug