Bias emission voltage and dose-dependent current gain are the key parameters to detect the physical performance of bipolar transistors. Firstly, the effect of X-light with energy 22.1 and 25.0 keV from ¹⁰⁹Cd on the current gain of lateral PNP bipolar transistors is measured. The substantial difference of current gain with the variation of bias and emission voltage is observed. Then, on basis of the outcomes of the nonlinear curve fitting approach, the relationship between bias voltage and emission-related current gain is successfully explained by using the model of combination Maxwell Boltzmann statistical with Bose-Einstein probability. The simulation results are in good agreement with the observed curves (current gain vs. voltage). The minimal correlation coefficient between experimental data and computed data is 0.998. In all cases considered, the mean relative error between the measured value and the model value is not more than 5.0%. Finally, the mathematical link between the parameters of current gain and voltage and the X-light dose is obtained. Therefore, using only one function, the current gain can be anticipated by the voltage and dose between bias and emission. The influence of X-light on the current gain of transverse PNP bipolar transistors is firstly discussed quantitatively.

偏置发射电压和剂量相关的电流增益是检测双极晶体管物理性能的关键参数。首先，能量为^109的22.1和25.0 keV的X射线的影响测量横向PNP双极晶体管的电流增益上的Cd。观察到电流增益随偏置电压和发射电压的变化存在很大的差异。然后，基于非线性曲线拟合方法的结果，通过使用具有Bose-Einstein概率的Maxwell Boltzmann统计组合模型成功地解释了偏置电压与与发射相关的电流增益之间的关系。仿真结果与观察到的曲线（电流增益与电压）非常吻合。实验数据与计算数据之间的最小相关系数为0.998。在所有考虑的情况下，测量值和模型值之间的平均相对误差均不超过5.0％。最后，获得了电流增益和电压参数与X射线剂量之间的数学联系。因此，仅使用一种功能，就可以通过偏置和发射之间的电压和剂量来预测电流增益。首先定量地讨论了X光对横向PNP双极型晶体管电流增益的影响。