In this review, a review a of the applications of micro-Raman spectroscopy (μRS) to characterize the residual strain and/or stress in electronic packaging is presented. Micro-Raman spectroscopy is considered as an effective tool for residual stress evaluation in semiconductor devices at the microscale level due to its nondestructive, noncontact feature with high spatial resolution. In this review, a comparison of μRS to the other measurement techniques, such as DIC, micro moiré and XRD has been illustrated. The range of problems in semiconductor packaging that can be characterized by μRS has been discussed. The basics of μRS in stress/strain measurement is described and the recent progress of residual stress measurement including shear stress component is discussed in detail. Two case studies for the use of μRS in electronic packaging are presented, including in the application of through silicon via (TSV) and flip chip assembly. Finally, several challenges for the future development of μRS are discussed.

在这篇综述中，介绍了微拉曼光谱（μRS）在表征电子包装中残余应变和/或应力方面的应用的综述。由于显微拉曼光谱具有无损，非接触且具有高空间分辨率的特点，因此被认为是在微米级评估半导体器件残余应力的有效工具。在本综述中，已说明了μRS与其他测量技术（例如DIC，微波纹和XRD）的比较。已经讨论了可以用μRS表征的半导体封装中的问题范围。描述了在应力/应变测量中μRS的基础，并详细讨论了包括剪切应力分量在内的残余应力测量的最新进展。本文介绍了在电子封装中使用μRS的两个案例研究，包括在硅通孔（TSV）和倒装芯片组装中的应用。最后，讨论了μRS未来发展的几个挑战。