Self-organization in soft (shear modulus: μ < 1 MPa) thin films (thickness: h < 10 μm) like poly-dimethyl siloxane has been conducive in forming patterns at meso-nano lengthscales. When an elastically inhomogeneous thin film, with depthwise positive shear modulus variation, is near an external contactor, the instabilities ensue at a reduced lengthscale of ${\lambda }_c=\left(2.96-0.37logR-0.078M\right)h$ compared to ${\lambda }_c=2.96h$ for homogeneous films ($R={\mu }_{\mathit{base}}/{\mu }_{\mathit{film}}$, M slope variation parameter, values of which are 1 and 0 for a homogeneous film). For long-ranged electrostatic interactions, for constant separation distances, the reduced patterns ensue at critical voltages of ~50 V (10 times lower), whereas for constant voltages, dense spiky patterns with 20 times increase in asperity ratio than homogeneous films of similar base modulus are observed in the present numerical studies. All these effects, favourable for creating enhanced functionalized surfaces are relatively more noticeable for those inhomogeneous films which possess high shear modulus gradient $\left(\frac{\mathrm{\Delta }\mu }{\mathrm{\Delta }z}/\mu -20\right)$ near the free interface.

像聚二甲基硅氧烷之类的软（剪切模量：μ<1 MPa）薄膜（厚度：h <10μm）中的自组织作用有利于在中纳米长度尺度上形成图案。当弹性不均匀的薄膜在深度方向上具有正剪切模量变化时，在外部接触器附近时，会在减小的长度范围内产生不稳定性。${\lambda }_C=\left(2.96--0.37升ØG\mathrm{[R}--0.078\mathrm{中号}\right)H$ 相比 ${\lambda }_C=2.96H$ 用于均质膜（$\mathrm{[R}={\mu }_{\mathit{根据}}/{\mu }_{\mathit{电影}}$，M坡度变化参数，对于均质膜，其值为1和0）。对于长距离的静电相互作用，对于恒定的分离距离，在〜50 V的临界电压下会出现还原后的图形，而对于恒定电压，与相似基片的均质膜相比，密集的尖峰图形的粗糙比增加了20倍。在当前的数值研究中观察到模量。对于那些具有高剪切模量梯度的非均质薄膜而言，所有这些有利于产生增强的功能化表面的效果都相对更加明显。$\left(\frac{\mathrm{\Delta }\mu }{\mathrm{\Delta }ž}/\mu --20\right)$ 在免费界面附近。