Abstract

High-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer is formed via the self-aligned implantation of high-energy (53 MeV) argon ions into 4H-SiC. To mask the active region of the diodes, 10–12-μm-thick nickel columns with vertical walls are grown on Schottky contacts by local electrochemical deposition. A comparison of the current–voltage characteristics of terminated and nonterminated diodes shows that the forward current–voltage characteristics barely degrade after implantation, whereas the reverse current–voltage characteristics are greatly improved. Both the forward and reverse current–voltage characteristics of terminated diodes are well described in terms of the classical thermionic emission model if lowering of the Schottky-barrier height with increasing bending of energy bands is taken into account.

中文翻译：

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具有场板边缘端接的高压4 H -SiC肖特基二极管

摘要

制作了高压（2000V）4 H -SiC肖特基二极管。为了抑制二极管结构边缘处的过早击穿，将场板形成为边缘终端。在该板上，通过将高能（53 MeV）氩离子自对准注入4 H中形成绝缘层。-SiC。为了掩盖二极管的有源区域，通过局部电化学沉积在肖特基接触上生长了具有垂直壁的10–12μm厚的镍柱。对端接和未端接二极管的电流-电压特性的比较表明，注入后正向电流-电压特性几乎不会降低，而反向电流-电压特性得到了很大的改善。如果考虑到随着能带弯曲的增加而降低肖特基势垒高度，则可以根据经典的热电子发射模型很好地描述端接二极管的正向和反向电流-电压特性。