Abstract

In this paper, we study the radiation-induced processes occurring during the implantation of antimony ions into films of the positive diazoquinone-novolac (DQN) FP9120 photoresist (PR) on silicon by the Fourier-transform infrared (FTIR) spectroscopy of the frustrated total internal reflection (TIR). Ion implantation (II) is found to lead to the appearance in the frustrated TIR spectrum of a band at 2331 cm^–1 caused by the O=C=O stretching vibrations. The violation of adhesion at the PR/silicon interface manifests itself in the appearance of a 610 cm^–1 band related to the absorption of the Si lattice. The formation of new C–O–C bonds because of the ether cross links of ketene with the OH group of novolac resin is found.

中文翻译：

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通过注入锑离子对重氮醌-酚醛清漆光刻胶膜的改性

摘要

在本文中，我们通过受挫总表面的傅立叶变换红外（FTIR）光谱研究了锑离子注入到硅上的重氮醌-novolac（DQN）FP9120正光致抗蚀剂（PR）膜上的辐射诱导过程。内部反射（TIR）。发现离子注入（II）会导致由O = C = O拉伸振动引起的2331 cm ^–1处的谱带在受挫的TIR光谱中出现。PR /硅界面处粘附力的破坏表现为与Si晶格吸收有关的610 cm ^-1谱带。由于乙烯酮与酚醛清漆树脂的OH基团之间的醚交联，形成了新的C–OC–C键。