Abstract

In this paper, we investigate the relationship between the external and internal plasma parameters in a C₄F₈ + O₂ + Ar mixture under conditions of an inductive radio-frequency (13.56 MHz) discharge. With the combined use of plasma diagnostics based on Langmuir probes and zero-dimensional (global) plasma simulation, first, the key plasma-chemical processes that form stationary electrophysical parameters and gas phase composition are identified; second, the densities of the neutral and charged particle fluxes to the surface contacting with the plasma are determined; and third, a phenomenological (using tracking parameters as ratios of particle flux densities) analysis of the kinetics of the heterogeneous processes that occur during SiO₂ etching is carried out. In addition, assumptions about the mechanisms of influence of the initial mixture composition and gas pressure on the etching rate and effective interaction probability in the SiO₂ + F system are made.

中文翻译：

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C 4 F 8 + O 2 + Ar混合物的等离子体中的体积和非均相过程的动力学

摘要

在本文中，我们研究了在感应射频（13.56 MHz）放电条件下C ₄ F ₈ + O ₂ + Ar混合物中外部和内部等离子体参数之间的关系。结合使用基于Langmuir探针的等离子体诊断和零维（全局）等离子体模拟，首先，确定形成固定电物理参数和气相组成的关键等离子体化学过程。其次，确定到与等离子体接触的表面的中性和带电粒子通量的密度。第三，现象学（使用跟踪参数作为颗粒通量密度的比率）分析SiO ₂期间发生的异质过程的动力学进行蚀刻。另外，对初始混合物组成和气压对SiO ₂ + F体系中蚀刻速率和有效相互作用概率的影响机理进行了假设。