Abstract

The effect of porosity on the charge-discharge characteristics of thin films based on an Si–O–Al nanocomposite with two types of structure, homogeneous and columnar, is studied. An additional increase in the porosity of thin Si–O–Al films is achieved by removing the \({\text{Si}}{{{\text{O}}}_{x}}\) phase, where \(1 < x \leqslant 2,\) when etching in a solution of hydrofluoric acid. The charge-discharge characteristics of the films were investigated in half-cells in the galvanostatic mode. It is shown that processing films with a columnar structure leads to an increase in their specific capacity and stability under extreme charge-discharge modes.

中文翻译：

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薄膜硅基阳极孔隙率对其充放电特性影响的实验研究

摘要

研究了孔隙度对具有均匀结构和柱状两种结构的Si-O-Al纳米复合材料薄膜的充放电特性的影响。通过去除\（{\ text {Si}} {{{\ text {O}}} _ {x}} \）相，可以使Si-O-Al薄膜的孔隙率进一步增加，其中\（ 1 <x \ leqslant 2，\）在氢氟酸溶液中蚀刻时。在恒电流模式下，在半电池中研究了薄膜的充放电特性。结果表明，在极端的充放电模式下，加工具有柱状结构的膜会导致其比容量和稳定性的增加。