Abstract

A numerical model of the evolution of the trench profile during cryogenic etching in SF₆/O₂ plasma based on the cellular representation of the surface state, the Monte Carlo method for calculating particle fluxes, and the scheme of delayed desorption of reaction products is proposed. This description combines the advantages of the cell method (the ability to describe phenomena of a stochastic nature) and the string method (parameterization of the model in terms of physically observable quantities). The consistency of the model for etching silicon and silicon oxide in a fluorine-containing plasma, as well as etching in a SF₆/O₂ mixture at different temperatures is demonstrated. Spontaneous etching of silicon under the action of fluorine radicals, ion-stimulated etching, surface passivation in plasma containing oxygen radicals are simulated. A model that describes the temperature dependence of the etching character is proposed.

中文翻译：

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低温蚀刻的数值模拟：延迟解吸模型

摘要

提出了基于表面状态的细胞表示，颗粒通量的蒙特卡罗方法和反应产物延迟脱附方案的SF ₆ / O ₂等离子体低温刻蚀过程中沟槽轮廓演变的数值模型。。此描述结合了单元方法（描述随机性质的现象的能力）和字符串方法（根据物理可观察量对模型进行参数化）的优点。在含氟等离子体中蚀刻硅和氧化硅以及在SF ₆ / O _2中蚀刻的模型的一致性证明了在不同温度下的混合物。模拟了在氟自由基作用下硅的自发蚀刻，离子激发蚀刻，含氧自由基的等离子体中的表面钝化。提出了描述刻蚀特性的温度依赖性的模型。