Abstract

The electrical resistivity ρ of cobalt films with a thickness of 10 to 55 nm deposited in different modes of magnetron sputtering on SiO₂/Si wafers with their subsequent ion-plasma treatment is investigated. Co films 42 nm thick with minimum ρ of 9.8 µΩ cm, comparable to ρ of a bulk metal, are obtained at a temperature of 600 K. Treating the Co film surface in dense argon plasma with an energy of ions of about 20 eV at room temperature leads to an increase in resistivity, while, at Т ~ 500 K, both a decrease and an increase in ρ are observed. Such a change in resistivity is due to the combined action of ion bombardment and temperature. The mechanism of action of the ion-plasma treatment on the electrical conductivity of the Co film is discussed.

中文翻译：

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沉积条件和钴薄膜的离子等离子体处理对其电阻率的影响

摘要

研究了在磁控溅射的不同模式下，在SiO ₂ / Si晶片上沉积10至55 nm厚度的钴膜的电阻率ρ，然后对其进行了离子等离子体处理。在600 K的温度下获得42 nm厚的Co膜，最小ρ为9.8 µΩ cm，与块状金属的ρ相当。在室温下在浓氩等离子体中用约20 eV的离子能量处理Co膜表面温度导致电阻率增加，而在Т〜500  K时，观察到ρ的降低和升高。电阻率的这种变化归因于离子轰击和温度的共同作用。讨论了等离子体处理对Co膜电导率的作用机理。