Pristine graphene and graphene-based heterostructures can exhibit exceptionally high electron mobility if their surface contains few electron-scattering impurities. Mobility directly influences electrical conductivity and its dependence on the carrier density. But linking these key transport parameters remains a challenging task for both theorists and experimentalists. Here, we report numerical and analytical models of carrier transport in graphene, which reveal a universal connection between graphene’s carrier mobility and the variation of its electrical conductivity with carrier density. Our model of graphene conductivity is based on a convolution of carrier density and its uncertainty, which is verified by numerical solution of the Boltzmann transport equation including the effects of charged impurity scattering and optical phonons on the carrier mobility. This model reproduces, explains, and unifies experimental mobility and conductivity data from a wide range of samples and provides a way to predict a priori all key transport parameters of graphene devices. Our results open a route for controlling the transport properties of graphene by doping and for engineering the properties of 2D materials and heterostructures.

如果原始的石墨烯和基于石墨烯的异质结构的表面包含很少的电子散射杂质，它们可能会表现出极高的电子迁移率。迁移率直接影响电导率及其对载流子密度的依赖性。但是，将这些关键的运输参数联系起来对于理论家和实验家来说仍然是一项艰巨的任务。在这里，我们报告了石墨烯载流子传输的数值和分析模型，揭示了石墨烯载流子迁移率与电导率随载流子密度的变化之间的普遍联系。我们的石墨烯电导率模型基于载流子密度及其不确定性的卷积，这是通过玻尔兹曼输运方程的数值解验证的，其中包括带电杂质的散射和光子对载流子迁移率的影响。该模型可重现，解释和统一来自各种样品的实验迁移率和电导率数据，并提供一种先验地预测石墨烯器件的所有关键传输参数的方法。我们的研究结果为通过掺杂控制石墨烯的传输特性以及设计2D材料和异质结构的特性开辟了一条途径。