In order to optimize the performance of the ultraviolet photodetectors, a dual-band detector with light trapping effect is fabricated by using a hydrothermal method. By adding Mg into ZnO material can form Mg_0.2Zn_0.8O alloy which results the band gap increases and the detection region extends to the shorter wavelength. With the introduction of nanowires, the responsivity increases which is attributed to the light trapping effect of nanowires array structure. The ZnO nanowires photodetector significantly accelerate the performance where is observed along with higher responsivity, larger detectivity, and enhanced EQE of 15.1 A/W, 3.1 × 10¹² jones and 5.0 × 10³ % respectively. In conjunction with ZnO nanowires array, which shows strong light trapping effect, the ability of photodetectors is greatly enhanced. Controlled nanowires of ultraviolet photodetectors with light trapping effect can open the way for integrated ZnO technology for future optoelectronic applications.

为了优化紫外光电探测器的性能，采用水热法制备了具有光捕获效应的双波段探测器。通过将Mg添加到ZnO中，材料可以形成Mg _0.2 Zn _0.8 O合金，从而导致带隙增加并且检测区域延伸到较短的波长。随着纳米线的引入，响应度增加，这归因于纳米线阵列结构的光捕获效应。ZnO纳米线光电探测器可显着提高性能，并具有更高的响应度，更大的检测能力和增强的15.1 A / W，3.1×10 ¹²琼斯和5.0×10 ^3的EQE。％ 分别。结合具有强光捕获作用的ZnO纳米线阵列，大大提高了光电探测器的能力。具有光捕获作用的紫外光电探测器的可控纳米线可以为未来光电应用中的集成ZnO技术开辟道路。