The effects of X-ray irradiation on amorphous indium-gallium-zinc oxide (a-IGZO) and low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were investigated. A comparison of the electrical characteristics of the TFTs at different stages of exposure to X-rays was conducted. After X-ray irradiation, the a-IGZO TFTs maintained their performance, while the LTPS TFTs showed considerable performance degradation. A distinct negative threshold voltage shift occurred in the LTPS TFTs under X-ray irradiation. In addition, the electrical parameters including mobility, subthreshold swing and off-current were significantly deteriorated. In addition, the binding energy shift of Si 2p peaks in the phase transition region of the interlayer between Si and SiO₂ was confirmed by XPS depth profile analysis. This result indicates that permanent damage to the LTPS crystalline structure was induced under X-ray exposure. Under the same doses of X-ray irradiation, the a-IGZO film did not exhibit any notable change, indicating the tolerance of a-IGZO to X-ray irradiation. Therefore, we expect a-IGZO to be applied in the active matrix backplane of medical X-ray detectors for use for prolonged periods of time. This work not only provides systemic studies on the effects of X-rays on semiconductor materials but also proposes an alternative material to highly endurable X-ray detectors.

研究了X射线辐照对非晶铟镓锌氧化物（a-IGZO）和低温多晶硅（LTPS）薄膜晶体管（TFT）的影响。比较了在暴露于X射线的不同阶段的TFT的电特性。在X射线照射后，a-IGZO TFT保持其性能，而LTPS TFT则表现出相当大的性能下降。在X射线照射下，LTPS TFT中出现明显的负阈值电压偏移。此外，包括迁移率，亚阈值摆幅和截止电流在内的电参数也大大降低。另外，在Si和SiO ₂之间的中间层的相变区域中，Si 2p的结合能移动峰由XPS深度剖面分析证实。该结果表明在X射线暴露下引起对LTPS晶体结构的永久性破坏。在相同剂量的X射线辐照下，a-IGZO膜没有任何显着变化，表明a-IGZO对X射线辐照的耐受性。因此，我们希望将a-IGZO用于医用X射线探测器的有源矩阵背板，以延长使用时间。这项工作不仅提供了有关X射线对半导体材料影响的系统研究，而且为高耐用性X射线探测器提供了替代材料。