Journal of Central South University ( IF 4.4 ) Pub Date : 2021-02-18 , DOI: 10.1007/s11771-021-4607-z Fu-rong Yao , Ming-qiang Pan , Zong-jian Zhu , Ji-zhu Liu , Yang-jun Wang
The article improves the process of dielectric barrier discharge (DBD) activated anode bonding. The treated surface was characterized by the hydrophilic surface test. The results showed that the hydrophilic angle was significantly reduced under nano-gap conditions and the optimal discharge voltage was 2 kV Then, the anodic bonding and dielectric barrier discharge activated bonding were performed in comparison experiments, and the bonding strength was characterized by tensile failure test. The results showed that the bonding strength was higher under the nano-gap dielectric barrier discharge. This process completed 110 °C ultra-low temperature anodic bonding and the bonding strength reached 2 MPa. Finally, the mechanism of promoting bonding after activation is also discussed.
中文翻译:
基于纳米间隙介电势垒放电的硅和玻璃超低温阳极键合
该文章改进了介电势垒放电(DBD)激活的阳极键合工艺。通过亲水性表面测试表征处理过的表面。结果表明,在纳米间隙条件下,亲水角明显减小,最佳放电电压为2 kV。然后,通过对比实验进行了阳极键合和介质阻挡放电激活键合,并通过拉伸破坏试验表征了键合强度。结果表明,在纳米间隙电介质阻挡放电下,结合强度较高。该过程完成了110°C的超低温阳极键合,键合强度达到2 MPa。最后,还讨论了活化后促进键合的机理。