The growth of γ-In₂Se₃ thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ-In₂Se₃ is achieved at a relatively low growth temperature. An ultrathin β-In₂Se₃ buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystalline γ-In₂Se₃ at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ-In₂Se₃ thin films.

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国家重点研发计划项目（2018YFA0306102和2018YFA0306703），国家自然科学基金（61474014），四川国家科技计划项目（批准号：2019YJ0202），高校研究生精品课程。

研究了分子束外延在云母上生长γ -In ₂ Se ₃薄膜。单晶γ -In ₂ Se ₃在较低的生长温度下获得。观察到超薄β - In ₂ Se ₃缓冲层在初始沉积时通过自组织过程成核和生长，这有利于随后单晶γ - In ₂ Se ₃在低温下单片外延。在实现的γ -In中观察到强的室温光致发光和适度的光电响应₂ Se ₃薄膜。