In the presented study, (Ni, Mg) co-doped CdS thin films are synthetized using the spin coating method. The Mg incorporation effect on the structural, opto-electrical quality of Cd_0.98Ni_0.02S with different Mg concentrations (0 wt%, 1wt.%, 3wt, and 5wt.%) are investigated. A polycrystalline nature with a cubic structure oriented to (1 1 1) plane was confirmed by the DRX technique, and the incorporation of Mg in Cd_0.98Ni_0.02S causes an increase of the grain size. The SEM study exhibits a surface of deposited films is dense and the EDS spectra confirmed the existence of the doped elements. The optical properties show that the doping with 3 at.% of Mg presents the maximum each a value of 90% in visible range, with an increasing in the gap energy from 2.42 eV to 2.49 eV corresponding to increasing of Mg concentration. And also optical parameters were investigated such as α, k, n, ε _r, ε _i, tan δ, σ. The electrical resistivity and conductivity measurements are carried using the four points probe, we find that the electrical resistivity decreases from the 7.30נ10³ (Ohm. cm) to 4.28 10³ (Ohm. cm) while Mg concentration increases from 0 at% to 5 at%.

在本研究中，使用旋涂法合成了（Ni，Mg）共掺杂的CdS薄膜。研究了Mg掺入对不同Mg浓度（0 wt％，1 wt。％，3wt和5wt。％）的Cd _0.98 Ni _0.02 S的结构，光电性能的影响。通过DRX技术证实了立方晶结构取向为（1 1 1）平面的多晶性质，并且在Cd _0.98 Ni _0.02中掺入了Mg。S引起晶粒尺寸的增加。SEM研究显示沉积膜的表面致密并且EDS光谱证实了掺杂元素的存在。光学性质表明，在可见光范围内，掺有3 at。％的Mg时，最大值呈现出90％的值，并且间隙能量从2.42 eV增加到2.49 eV，这与Mg浓度的增加相对应。并且还光学参数如进行了研究α，K，N，ε _{- [R} ，ε _我，棕褐色δ，σ。使用四点探针进行电阻率和电导率测量，我们发现电阻率从7.30נ10 ³降低（Ohm。cm）到4.28 10 ³（Ohm。cm），而Mg浓度从0 at％增加到5 at％。