The shortcomings of mono-component systems e.g. the gapless nature of graphene, the lack of air-stability in phosphorene, etc, have drawn great attention toward stacked materials that are expected to show interesting electronic and optical properties. Using a tight-binding approach and a Green’s function method, we investigate the electronic properties of armchair-edged lateral phosphorene–graphene heterostructures, which are either semiconductor–semiconductor or semiconductor–metal heterostructures, depending on the width of the graphene ribbon. It is found that the system is narrow-gapped, and that the bandgap can be modulated by tuning the sizes of the domains. Besides, an analysis of the bandgap variation versus the width of the component phosphorene ribbon indicates that, in a semiconductor–metal heterostructure, a phosphorene ribbon does not induce any electronic state near the Fermi level, suggesting that the suppressed electron transport should be attributed to hole transfer across the interface. Furthermore, we show that a transverse electric field can significantly diversify the electronic behavior of a heterostructure i.e. the heterostructure undergoes a semiconductor–metal phase transition. Moreover, tuning the transverse electric field yields the intriguing possibility that the system can undergo a topological phase transition from a band insulator to a topological insulator.

单组分体系的缺点，例如石墨烯的无间隙性质，磷烯中缺乏空气稳定性等，已引起人们对预期显示出有趣的电子和光学性能的堆叠材料的关注。使用紧密结合方法和格林函数方法，我们研究了带有扶手椅的侧向磷-石墨烯异质结构的电子特性，取决于石墨烯带的宽度，该结构是半导体-半导体或半导体-金属异质结构。发现该系统是窄带隙的，并且带隙可以通过调整域的大小来调制。此外，分析带隙变化与组分磷带的宽度之间的关系表明，在半导体-金属异质结构中，磷原子带不会在费米能级附近引发任何电子态，这表明受抑制的电子传输应归因于空穴在界面上的转移。此外，我们表明，横向电场可以显着地使异质结构的电子行为多样化，即​​异质结构经历了半导体-金属相变。此外，调节横向电场产生了令人感兴趣的可能性，即该系统可能经历从带绝缘子到拓扑绝缘子的拓扑相变。我们表明，横向电场可以显着地使异质结构的电子行为多样化，即​​异质结构经历了半导体-金属相变。此外，调节横向电场产生了令人感兴趣的可能性，即该系统可能经历从带绝缘子到拓扑绝缘子的拓扑相变。我们表明，横向电场可以显着地使异质结构的电子行为多样化，即​​异质结构经历了半导体-金属相变。此外，调节横向电场产生了令人感兴趣的可能性，即该系统可能经历从带绝缘子到拓扑绝缘子的拓扑相变。