The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al_0.3Ga_0.7N EBL with a doping concentration of 1 10²⁰ cm⁻³, the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing ultraviolet LED structures.

研究了未掺杂的BAlN电子阻挡层（EBL），以取代发光二极管（LED）中的常规AlGaN EBL。对各种掺杂的EBL对LED的输出特性的影响的数值研究表明，在AlGaN EBL的情况下，LED性能表现出对p掺杂水平的严重依赖性，而对于AlGaN EBL而言，对p掺杂水平的依赖性较小。巴恩EBL。因此，我们提出了一种用于LED的未掺杂BAlN EBL，以避免p掺杂问题，这是AlGaN EBL中的一项主要技术挑战。在没有掺杂的情况下，与具有高掺杂的AlGaN EBL相比，提出的BAlN EBL结构仍具有出色的阻挡电子和改善空穴注入的能力。与Al _0.3 Ga _0.7相比N EBL的掺杂浓度为1 10 ²⁰ cm ^-3，未掺杂的BAlN EBL LED仍然显示出较低的下垂（仅5％），兼容的内部量子效率（增强2％）和光输出功率（增强6％）。这项研究为设计紫外线LED结构时解决电子泄漏和空穴注入不足的问题提供了一条可行的途径。