A practicable solution to reduce the density of grain boundaries in metal thin films in order to improve their physical properties, and compatibility with nanoscale fabrications still remains a challenge for the thin film industry. We propose an alternative approach to the problem by using micron chevron-shaped laser beam (μCLB) annealing for rapid and selective growth of crystal grains in metal thin films. We investigate the laser annealing of various Au thin films and discuss the mechanisms of grain growth accounting for the microstructure of the Au films and interaction between the Au films and the substrate. The successful growth of single-grain crystal on a 50nm Au film by μCLB annealing is also demonstrated and further optimization of the process is discussed.

减小金属薄膜中的晶界密度以改善其物理性能以及与纳米级制造的相容性的可行解决方案仍然是薄膜工业的挑战。我们通过使用微米波浪形激光束（提出的另一种方法的问题μ CLB）退火在金属薄膜的晶粒的快速和选择性生长。我们研究了各种金薄膜的激光退火，并讨论了晶粒生长的机理，解释了金膜的微结构以及金膜与基板之间的相互作用。单粒晶体上的50nm的Au膜的成功生长由μ CLB退火还证明与该过程的进一步优化进行了讨论。